研究目的
Exploring the formation mechanism of porous structures in 3C–SiC films using LCVD.
研究成果
The study concluded that the porous structure of 3C–SiC films is formed due to the 'growth competing mechanism' and 'shadow effect' at high H2 flow rates. LCVD allows for the fabrication of porous films at lower flow rates compared to conventional CVD techniques.
研究不足
The study focuses on the growth mechanism at specific H2 flow rates and may not cover all possible conditions for porous structure formation.
1：Experimental Design and Method Selection:
The study used LCVD to grow porous 3C–SiC films on Si substrates using hexamethyldisiloxane (HMDS) as the precursor. The effect of H2 flow rate on the microstructure was analyzed.
2：Sample Selection and Data Sources:
Si(111) substrates were used. The microstructure was characterized using SEM and TEM.
3：List of Experimental Equipment and Materials:
LCVD equipment, HMDS precursor, Ar and H2 gases, SEM, TEM, XRD.
4：Experimental Procedures and Operational Workflow:
The substrate was placed in the LCVD chamber, vacuumed, and then HMDS and H2 were introduced. A laser heated the substrate to 1573 K for deposition.
5：Data Analysis Methods:
XRD for growth orientation, SEM and TEM for surface and cross-sectional morphologies.
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