研究目的
To elucidate the grain growth mechanism of IN718 superalloy fabricated by selective laser melting (SLM), focusing on epitaxial growth and competitive growth patterns.
研究成果
The study concluded that epitaxial growth in IN718 superalloy fabricated by SLM can occur by retaining the same direction or rotating by 90° across the melting pool boundary. Competitive growth is determined by both the heat flow direction and preferred crystallographic orientation. Grains tend to grow along the preferred crystallographic orientation due to high solidification rates, with faster growth observed when the deviation angle between the heat flow direction and preferred crystallographic orientation is smaller.
研究不足
The study focuses on the grain growth mechanism in IN718 superalloy fabricated by SLM, but the findings may not be directly applicable to other materials or manufacturing processes.
1：Experimental Design and Method Selection
The study involved the fabrication of IN718 superalloy samples using selective laser melting (SLM) to observe grain growth mechanisms.
2：Sample Selection and Data Sources
Spherical gas atomised IN718 powders with an average particle size of 65 μm were used. A rectangular-shaped sample was fabricated using specific SLM parameters.
3：List of Experimental Equipment and Materials
EOS M280 rapid forming machine equipped with a Maximum Integrated 400 W Yb fibre laser, SEM (FEI 650), electron backscatter diffraction system.
4：Experimental Procedures and Operational Workflow
SLM was conducted with specific parameters. A striped scanning strategy applying a 67° rotation between sequential layers was used. Microstructure observation and crystallographic orientation measurement were performed.
5：Data Analysis Methods
The microstructure was observed using SEM, and crystallographic orientation was measured using an electron backscatter diffraction system.
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