研究目的
Investigating the development of a self-powered filterless narrow-band p-n heterojunction photodetector for low background limited near-infrared image sensor application.
研究成果
The research successfully demonstrated a self-powered narrowband near-infrared photodetector based on a CuGaTe2/silicon p-n heterojunction, with a peak response at 1050 nm and a full-width at half-maximum of ~118 nm. The device showed high specific detectivity and responsivity, indicating its potential for applications requiring high spectral selectivity and low background interference.
研究不足
The study is limited by the need for precise control over the CuGaTe2 film thickness to achieve optimal narrow-band response. Additionally, the photodetector's performance may be influenced by defects in the CuGaTe2 film, which could affect carrier recombination and photocurrent generation.
1：Experimental Design and Method Selection:
The study involved the fabrication of a CuGaTe2/silicon p-n heterojunction photodetector using pulsed laser deposition (PLD) for CuGaTe2 film synthesis. The device's performance was evaluated under various light wavelengths and intensities.
2：Sample Selection and Data Sources:
The samples included CuGaTe2 films of varying thicknesses deposited on n-type Si substrates. Data was collected on the photodetector's response to different wavelengths of light.
3：List of Experimental Equipment and Materials:
Equipment included a pulsed laser deposition system, field emission scanning electron microscope (FESEM), energy dispersive spectroscopy (EDS), atomic force microscope (AFM), X-ray diffraction (XRD), Raman spectrometer, high-resolution transmission electron microscopy (HRTEM), UV–vis spectrophotometer, and a photoemission spectroscopy system.
4：Experimental Procedures and Operational Workflow:
The process involved depositing CuGaTe2 films on Si substrates, characterizing the films, fabricating the photodetector, and testing its photoresponse under various conditions.
5：Data Analysis Methods:
The responsivity, external quantum efficiency (EQE), and specific detectivity were calculated based on the photocurrent measurements under different light intensities and wavelengths.
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X-ray Diffraction
D/max-rB
Rigaku
Used for XRD examination of the samples.
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High-Resolution Transmission Electron Microscopy
JEM- 2100F
JEOL
Used for examining the crystalline structure of the film.
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UV–vis Spectrophotometer
UV-2550
Shimadzu
Used for testing the absorption spectra of the samples.
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Photoemission Spectroscopy System
ESCALAB 250
Thermo-VG Scientific
Used for determining the work function of the CuGaTe2.
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Pulsed Laser Deposition System
COM-PexPro 102
Lambda Physik
Used for the synthesis of CuGaTe2 films.
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Field Emission Scanning Electron Microscope
SIRION 200 FEG
Used for examining the morphologies and chemical composition of the CuGaTe2 films.
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Atomic Force Microscope
CSPM-4000
Benyuan Nanotech Com
Used for observing the topography of the samples.
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Raman Spectrometer
HR Evolution
Horiba Jobin Yvon
Used for measuring the Raman spectra of samples.
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