研究目的
Investigating the integration of a field-assisted superlinear threshold selector with resistive random access memory (RRAM) to overcome the sneak current challenge in cross-point RRAM integration.
研究成果
The FAST selector demonstrates excellent performance metrics, including high selectivity, sharp turn-ON slope, and high endurance, making it suitable for high-density RRAM integration. The 1S1R integration successfully overcomes the sneak path challenge, offering significant improvements in memory ON/OFF ratio and selectivity.
研究不足
The study focuses on the integration of FAST selectors with RRAM for high-density memory applications, but the scalability beyond 4 Mb arrays and the detailed switching mechanism of the FAST selector require further investigation.
1：Experimental Design and Method Selection:
The study utilizes a field-assisted superlinear threshold (FAST) selector to mitigate sneak current in a 3-D-stackable 1S1R passive cross-point RRAM. The selector's performance metrics include high selectivity, sharp switching slope, tunable threshold voltage, and endurance.
2：Sample Selection and Data Sources:
The devices were fabricated using a 130-nm CMOS technology without any modification of standard process equipment.
3：List of Experimental Equipment and Materials:
Includes FAST selector devices, RRAM cells, and a 130-nm CMOS fabrication process.
4：Experimental Procedures and Operational Workflow:
The study involves the fabrication and electrical characterization of FAST selectors and their integration with RRAM cells in 1S1R configurations.
5：Data Analysis Methods:
Electrical characteristics were measured, including selectivity, switching slope, threshold voltage tunability, and endurance.
独家科研数据包，助您复现前沿成果，加速创新突破
获取完整内容
