研究目的
To numerically propose and investigate the plasmon-induced transparency (PIT) and slow light effect based on terahertz (THz) chipscale plasmonic semiconductor-insulator-semiconductor (SIS) waveguide system.
研究成果
The study successfully demonstrates the manipulation of THz transmission and group delay in subwavelength scale through geometrical, thermal, and electrical approaches. The proposed system has potential applications in THz ultracompact circuits as filters, sensors, modulators, and active optical delay lines.
研究不足
The study is based on numerical simulations, and practical fabrication and measurement challenges are not addressed. The performance may vary with real-world material properties and fabrication tolerances.
1：Experimental Design and Method Selection:
The study utilizes numerical simulations to investigate the PIT and slow light effect in THz chipscale plasmonic SIS waveguides. The transmission-line method (TLM) is used for theoretical description.
2：Sample Selection and Data Sources:
The study focuses on a proposed structure including an input waveguide and two side-coupled stub microcavities. The geometric parameters are defined, and the material properties of InSb and graphene are considered.
3：List of Experimental Equipment and Materials:
The study involves the use of InSb for the waveguide and monolayer graphene for active modulation. The fabrication can be achieved via laser micro-machining process on InSb wafer.
4：Experimental Procedures and Operational Workflow:
The numerical transmission spectrum is calculated for different structures. The impacts of geometric parameters, ambient temperature, and graphene's Fermi level on PIT and slow light are investigated.
5：Data Analysis Methods:
The transmission spectrum and group delay are analyzed to understand the PIT and slow light effects. The field distributions are examined to visualize the phenomena.
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