研究目的
Investigating the impact of gating potential and magnetic field on phonon induced spin relaxation rate and the speed of the electrically driven single-qubit operations inside the InSb nanowire spin qubit.
研究成果
The study demonstrates that in InSb nanowire spin qubits, a strong g factor and high magnetic field strength lead to the dominance of electron-phonon scattering due to deformation potential, significantly suppressing spin relaxation. Optimal performance of the spin qubit, in terms of the number of single-qubit operations during its lifetime, is achieved with a single quantum dot gating potential.
研究不足
The study is theoretical and relies on numerical simulations. The practical implementation of the findings may be constrained by the current technological capabilities in fabricating and controlling InSb nanowire quantum dots.
1：Experimental Design and Method Selection:
The study involves numerical diagonalization of the Hamiltonian describing an electron confined in an InSb nanowire under various gating potentials and magnetic field strengths.
2：Sample Selection and Data Sources:
The study uses theoretical models and parameters related to InSb nanowires, including effective mass, spin-orbit coupling strengths, and Landé g factor.
3：List of Experimental Equipment and Materials:
Theoretical study, no physical equipment used.
4：Experimental Procedures and Operational Workflow:
Numerical solutions of the Schr?dinger equation for the Hamiltonian under different conditions to analyze Rabi frequency and spin relaxation rates.
5：Data Analysis Methods:
Analysis of the dependence of Rabi frequency and spin relaxation rates on magnetic field strength and orientation, and gating potential type.
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