研究目的
Investigating the effects of Ni doping on the photocurrent, responsivity, and detection range of Cu1-xNixO film photodetectors.
研究成果
High-quality Cu1-xNixO films were prepared by the solution process, with the Cu0.8Ni0.2O photodetector showing the best performance in terms of photocurrent, responsivity, and EQE. The findings provide a route to fabricate high performance and wide detection range p-type metal oxide photodetectors.
研究不足
The study focuses on Ni-doped CuO films and their photodetector applications, with potential areas for optimization including further investigation of the effects of Ni doping concentrations beyond 40% and the performance under light power density less than 0.5 mW/cm2.
1：Experimental Design and Method Selection:
High-quality Cu1-xNixO films were prepared by a solution process. The crystal quality, morphology, and grain size of Cu1-xNixO films were modulated by Ni doping.
2：Sample Selection and Data Sources:
Cu1-xNixO films with different Ni doping concentrations (x=0,
3：2, and 4) were prepared and characterized. List of Experimental Equipment and Materials:
X-ray diffraction (XRD, D/MAX-2550, Rigaku Co.), atomic force microscope (Digital Instruments Icon, Bruker), X-ray photoelectron spectroscopy (XPS, RBD upgraded PHI-5000C ESCA system, Perkin-Elmer), scanning electron microscope (SEM, Zeiss), energy dispersive spectrometer (EDS: QUANTAX EDS, Bruker), double beam ultraviolet-infrared spectrophotometer (Perkin Elmer UV/Vis Lambda 950).
4：0). Experimental Procedures and Operational Workflow:
4. Experimental Procedures and Operational Workflow: The films were spin-coated onto SiO2/Si substrates, solidified on a hot plate, and annealed. Photodetectors were fabricated by depositing Au electrodes on Cu1-xNixO films.
5：Data Analysis Methods:
The responsivity and external quantum efficiency (EQE) were calculated from the photocurrent measurements.
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