研究目的
To investigate the application potentials of Bi films grown by vapor deposition in next generation of optoelectronic devices, specifically in self-powered and flexible photodetectors.
研究成果
The Bi films grown by vapor deposition method exhibit excellent photoresponse properties, making them suitable for self-powered and flexible photodetectors. These findings open up new possibilities for the application of Bi films in next-generation optoelectronic devices.
研究不足
The study focuses on the photoresponse properties of Bi films under specific conditions. The scalability of the vapor deposition method for large-area applications and the long-term stability of the flexible photodetectors under continuous bending cycles need further investigation.
1：Experimental Design and Method Selection:
Bi films were synthesized on SiO2 and PI substrates by vapor deposition method. The photodetectors were fabricated using these films.
2：Sample Selection and Data Sources:
Bi powder (Alfa Aesar,
3：999%) was used as the source material. List of Experimental Equipment and Materials:
Optical Microscope (OLYMPUS, BX53MRF-S), scanning electron microscopy (SEM, Tescan Vega3 SBH), Renishaw InVia Raman spectrometer, X-ray diffraction (XRD), Keithley 2612B system source meter.
4：Experimental Procedures and Operational Workflow:
The Bi films were grown in a quartz tube furnace with N2 gas flow. Photoelectric measurements were conducted under various bias voltages and laser power.
5：Data Analysis Methods:
The photocurrent and responsivity were analyzed using specific formulas to evaluate the performance of the photodetectors.
独家科研数据包，助您复现前沿成果，加速创新突破
获取完整内容
