研究目的
Investigating the effects of large lattice relaxations on the properties of Cu(In, Ga)Se2 photovoltaic devices under various light, temperature, and voltage bias conditions.
研究成果
The metastable behavior of CIGS PV devices is attributed to large lattice relaxations, with activation energies of approximately 0.90 and 1.20 eV for devices with lower and higher sodium content, respectively. First-principles calculations suggest that the (VSe ? VCu) complex may not be responsible for the observed metastability.
研究不足
The study is limited by the sensitivity of activation energies to sodium content, which is difficult to control during film deposition. Additionally, the distinction between first- and second-order kinetics is not clear from the data.
1：Experimental Design and Method Selection:
The study involves in situ stress experiments, reaction kinetics analysis, and first-principles calculations to quantify activation energies associated with large lattice relaxations in CIGS photovoltaic devices.
2：Sample Selection and Data Sources:
Two types of CIGS devices were evaluated: type 1 (standard sodium content) and type 2 (reduced sodium content).
3：List of Experimental Equipment and Materials:
Devices were fabricated using soda-lime glass substrates, sputtered AlOx-AlN barrier layers, molybdenum back contact layers, CIGS layers, CdS buffer layers, and ZnO window layers. Characterization was performed using a Keithley 2400 source measure unit and a Solartron SI 1260 A impedance analyzer.
4：Experimental Procedures and Operational Workflow:
Devices were subjected to light, bias, and heat stress conditions, with performance metrics measured in situ.
5：Data Analysis Methods:
The time dependence of device properties was analyzed using reaction kinetics models, and activation energies were extracted from Arrhenius plots.
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