研究目的
To address the issues of incident light loss and interfacial defect accumulation in self-powered perovskite photodetectors by designing a lateral photodetector based on CsPbI3–CsPbBr3 heterojunction nanowire arrays.
研究成果
The research successfully fabricates a self-powered photodetector based on lateral CsPbI3–CsPbBr3 heterojunction nanowire arrays, demonstrating high responsivity and fast response times. The flexible device also shows good performance under bending conditions, opening new avenues for perovskite heterojunction optoelectronic devices.
研究不足
The study focuses on the fabrication and performance of lateral photodetectors based on CsPbI3–CsPbBr3 heterojunction nanowire arrays, with potential limitations in scalability and long-term stability under extreme conditions.
1：Experimental Design and Method Selection:
The study employs an in situ conversion and mask-assisted electrode fabrication method to create a self-powered lateral photodetector.
2：Sample Selection and Data Sources:
CsPbI3 nanowire arrays are prepared on rigid glass and flexible polyethylene naphthalate substrates.
3：List of Experimental Equipment and Materials:
Includes polydimethylsiloxane (PDMS) model, CsPbI3 precursor, polyvinyl pyrrolidone (PVP), and tetrabutylammonium bromide (TBABr).
4：Experimental Procedures and Operational Workflow:
Involves printing CsPbI3 film into nanowire array, in situ transition, and electrode fabrication process.
5：Data Analysis Methods:
Characterizations include SEM, EDX, XRD, PL, TRPL, KPFM, and photoelectric properties measurement.
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