研究目的
Investigating the potential of disordered ionic-bonded transition metal oxide thin-film transistors (TFTs) for a variety of dc and RF switching applications, focusing on enhancement-mode zinc-oxide TFTs.
研究成果
The study demonstrates the potential of disordered MO semiconductors for high-performance applications, with ZnO TFTs showing promise for dc and RF switching applications. Further optimization in mobility and device scaling could enhance performance.
研究不足
The study is limited by the current fabrication techniques and material properties of ZnO TFTs, with potential for optimization in mobility and device scaling.
1：Experimental Design and Method Selection:
Enhancement-mode zinc-oxide TFTs were fabricated and their switching performance evaluated.
2：Sample Selection and Data Sources:
High-resistivity Si substrates were used for TFT fabrication.
3：List of Experimental Equipment and Materials:
Atomic layer deposition and pulsed-laser deposition (PLD) were used for depositing Al2O3 gate insulator and ZnO active layer.
4：Experimental Procedures and Operational Workflow:
Static and dynamic current–voltage tests were conducted to evaluate TFT performance.
5：Data Analysis Methods:
Gate charge (QG) was estimated by the integration of the CG –VG curve from the OFF-state to the ON-state while subtracting extrinsic (OFF-state) capacitance.
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