研究目的
Investigating the current–voltage characteristics of microlasers with an active region based on arrays of InGaAs/GaAs quantum well-dots to understand the formation of a nonelectrically conducting layer near the side surface.
研究成果
The study demonstrated that for microdisk lasers with diameters from 10.5 to 31 μ m, the current density should be calculated by assuming a 3 μ m reduction in the diameter of the current flow region compared to the cross-section diameter of the deep mesa. This suggests the presence of a nonconducting layer near the side walls, affecting the effective current flow area.
研究不足
The study did not stabilize the temperature during measurements, which could affect the accuracy of the I–V characteristics. Additionally, the effect of unintentional oxidation or damage near the side walls was not fully explored.
1：Experimental Design and Method Selection:
The study involved the fabrication and analysis of microdisk lasers with diameters ranging from
2：5 to 31 μ m, focusing on their current–voltage characteristics. Sample Selection and Data Sources:
The microlasers were fabricated using a heterostructure synthesized by the MOVPE method on an n+-GaAs substrate.
3：List of Experimental Equipment and Materials:
The active region consisted of five In
4：4Ga6As QWD layers placed in a GaAs waveguide, with n- and p-AlGaAs cladding layers. Microdisk cavities were formed by deep plasmochemical etching. Experimental Procedures and Operational Workflow:
The I–V characteristics were measured without stabilizing the temperature, and the current density was calculated based on the assumption of a reduced effective current flow area.
5：Data Analysis Methods:
The experimental data were analyzed to determine the true current density and the size of the nonconducting layer near the side walls.
独家科研数据包，助您复现前沿成果，加速创新突破
获取完整内容
