研究目的
Investigating the breakdown strength of MOVPE-grown Sn-doped β-Ga2O3 MOSFETs and their potential in high power switching applications.
研究成果
The fabricated β-Ga2O3 MOSFET demonstrated a record gate-to-drain electric field strength of 3.8 MV/cm, surpassing theoretical limits of bulk GaN and SiC. Future optimizations in layout, process, and material could further enhance performance.
研究不足
The study notes that with improved dielectric optimization, the breakdown strength could be extended. The mobility and sheet resistance values indicate room for improvement in material quality.
1：Experimental Design and Method Selection:
The study involved the growth of a Sn-doped β-Ga2O3 epitaxial layer via metal–organic vapor phase epitaxy (MOVPE) on a Mg-doped semi-insulating β-Ga2O3 substrate. MOSFETs were fabricated with specific gate lengths and spacings.
2：Sample Selection and Data Sources:
The substrate was cut from a two-inch boule grown via the Czochralski method. The epitaxial layer was doped with Sn.
3：List of Experimental Equipment and Materials:
Equipment included a Cascade automated test station, ICP/RIE etch using BCl3 chemistry, and atomic layer deposition for Al2O
4：Materials included Ti/Al/Ni/Au for source-drain electrodes. Experimental Procedures and Operational Workflow:
Device isolation was performed with an ICP/RIE etch. Source-drain electrodes were formed and annealed. A blanket Al2O3 layer was deposited for gate oxide and passivation.
5：Data Analysis Methods:
DC I-V measurements were made, and device performance was analyzed using Hall Effect measurements and simulation with Sentaurus Device.
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