研究目的
Investigating the impact of CsI concentration, relative humidity, and annealing temperature on lead-free Cs2SnI6 perovskites for visible light photodetectors application.
研究成果
The study successfully demonstrated the fabrication of lead-free Cs2SnI6 perovskite thin films at low temperatures, with preliminary photodetection properties indicating potential applicability in flexible, visible light photodetectors. The findings highlight the importance of CsI concentration, annealing temperature, and RH% levels in determining the films' properties.
研究不足
The study is limited by the preliminary nature of the photodetection properties of CSI devices, suggesting the need for further optimization of morphology and reduction of iodine deficiency to improve device performance.
1：Experimental Design and Method Selection:
The study involves the fabrication of Cs2SnI6 (CSI) films on Si substrates via direct solution spin coating process to investigate the effects of initial CsI concentrations, annealing temperatures, and relative humidity levels (RH%) on the films' properties.
2：Sample Selection and Data Sources:
CSI solutions with two different CsI concentrations (
3：60 mmol and 2 mmol) with constant 1 mmol SnI4 were used. The films were prepared on oxidized Si substrates under varying RH% levels (30%, 40%, 50%, 60%, and 80%). List of Experimental Equipment and Materials:
Instruments used include XRD, XPS, EDS, and FEG-SEM for analysis.
4：Experimental Procedures and Operational Workflow:
The films were annealed at different temperatures (75°C to 150°C) in a vacuum oven. The effect of these parameters on the films' morphology, chemical composition, and phase formation was studied.
5：Data Analysis Methods:
The analysis involved comparing XRD patterns, SEM images, and XPS spectra to determine the impact of processing conditions on film properties.
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