研究目的
Investigating the design and performance of a temperature tunable metasurface absorber based on all dielectric indium antimonide resonator structure in the terahertz region.
研究成果
A novel perfect temperature tunable MSA based on InSb all-dielectric resonator structure has been proposed and investigated numerically in THz region. The absorbance is up to 99.9% at 1.43 THz and the corresponding Q-factor is about 26.9 when the external environment temperature is 285 K. The proposed MSA may have potential prospects in temperature sensing and detection.
研究不足
The absorption performance of the proposed MSA will be deteriorated when increasing the oblique incident angle for both TE and TM mode. The SPP modes in the InSb star shaped structure can’t be excited effectively when oblique incidence.
1：Experimental Design and Method Selection:
The study employs a finite integration technology (FIT) in CST Microwave Studio for full wave simulations. The design schematic involves a semiconductor material InSb as the thermally tuning dielectric for the proposed MSA.
2：Sample Selection and Data Sources:
The unit-cell is formed by dielectric-metal (InSb–Au) bi-layer structure with a period smaller than the working wavelength.
3：List of Experimental Equipment and Materials:
The key materials include semiconductor InSb and gold (Au) as the substrate.
4：Experimental Procedures and Operational Workflow:
The excitation source is a terahertz linear polarization plane wave, irradiated perpendicularly to the unit-cell structure. Periodic boundary conditions are set along the x- and y-axis directions and an open boundary condition in the z-axis direction.
5：Data Analysis Methods:
The absorbance A(ω) of the designed MSA is calculated by A(ω) = 1 - R(ω) = 1- |S11(ω)|2, where S11(ω) is the reflection coefficient of the incident wave.
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