摘要： Perovskite nanocrystal (PNC) suffers from solution corrosion and water/oxygen oxidation when used in light-emitting diodes (LEDs). Atomic layer deposition (ALD) is applied to introduce Al2O3 infilling and interface engineering for the CsPbBr3 nanocrystal emission layers, and the inorganic electron transport layer-based CsPbBr3–ZnMgO LED device is fabricated. The introduction of Al2O3 ALD layers significantly improves the tolerance of CsPbBr3 PNC thin films to polar solvents ethanol of ZnMgO during spin coating. The operation lifetime of ALD-treated CsPbBr3 PNC–ZnMgO LED is prolonged to about two orders of magnitude greater than that of the CsPbBr3 PNC-TPBi LED device with a largely improved external quantum efficiency (EQE) value. Moreover, the infilling of Al2O3 into the CsPbBr3 layer boosts the carrier mobility for more than 40 times inside the light-emission layer. However, the interfacial carrier transport between different functional layers is hindered by the insulated Al2O3 layer, which provides an effective barrier for excess electron transport. Such a favorable band alignment facilitates the carrier balance of the device and contributes to the improved electroluminescent performance of the device with ALD Al2O3 interface engineering, which is further supported by theoretical device modeling. Herein, a facile method is provided to fabricate PNC-LED devices with both high efficiency and long-term lifetime.