研究目的
To report on progress made in the development of >20% efficient monolithic epitaxial III-V/Si tandem solar cells, aiming for >25% efficiency in the near-term and 30% with additional optimization.
研究成果
The study demonstrates progress in the development of GaAsP/Si tandem solar cells, with a current verified efficiency of 21.8%. With further optimization, efficiencies approaching 30% are within reach, indicating significant potential for improvement in monolithic epitaxial III-V/Si tandem solar cells.
研究不足
The study is limited by the defect (dislocation) content in the metamorphic upper cell materials and the need for further optimization of the bottom cell design and reduction of threading dislocation density (TDD) in the top cell.
1：Experimental Design and Method Selection:
The study involves optimization of GaAsP/Si tandem solar cells through materials quality improvement and device structure refinement.
2：Sample Selection and Data Sources:
Si substrates used were 100 mm diameter, p-type (1–10 Ω·cm), (100)-oriented with intentional miscut of 4° or 6° toward <011>.
3：1>. List of Experimental Equipment and Materials:
3. List of Experimental Equipment and Materials: MOCVD for growth, standard furnace diffusion processing for Si p-type subcells, optical lithography for device fabrication.
4：Experimental Procedures and Operational Workflow:
GaP nucleation via MOCVD-based atomic layer epitaxy, followed by bulk GaP homoepitaxy and GaAsyP1-y metamorphic buffer growth.
5：Data Analysis Methods:
Devices were analyzed via illuminated current-voltage (LIV) and external/internal quantum efficiency (EQE, IQE).
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