研究目的
To provide a detailed description of the structure of MRED and the implementation of the simulation of physical processes used to simulate radiation effects in electronic devices and circuits, and to demonstrate its ability to predict and describe basic physical phenomena associated with irradiation of electronic circuits and devices.
研究成果
MRED enables a broad range of validated simulation and analysis capabilities that facilitate the computation of energy deposition and transport in microelectronic materials and devices. The combination of MRED simulations and a targeted experimental test campaign can provide more accurate error rate calculations for a broad range of devices and integrated circuits in the space environment than was previously possible using traditional methods.
研究不足
The technical and application constraints of the experiments, as well as potential areas for optimization, are not explicitly mentioned in the provided text.