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[IEEE 2019 Conference on Lasers and Electro-Optics Europe & European Quantum Electronics Conference (CLEO/Europe-EQEC) - Munich, Germany (2019.6.23-2019.6.27)] 2019 Conference on Lasers and Electro-Optics Europe & European Quantum Electronics Conference (CLEO/Europe-EQEC) - Desynchronization of Pulsed Driving in the Formation of Soliton Kerr Frequency Combs

DOI:10.1109/cleoe-eqec.2019.8871907 出版年份:2019 更新时间:2025-09-23 15:21:01
摘要: MRED is a Python-language scriptable computer application that simulates radiation transport. It is the computational engine for the on-line tool CRèME-MC. MRED is based on c++ code from Geant4 with additional Fortran components to simulate electron transport and nuclear reactions with high precision. We provide a detailed description of the structure of MRED and the implementation of the simulation of physical processes used to simulate radiation effects in electronic devices and circuits. Extensive discussion and references are provided that illustrate the validation of models used to implement specific simulations of relevant physical processes. Several applications of MRED are summarized that demonstrate its ability to predict and describe basic physical phenomena associated with irradiation of electronic circuits and devices. These include effects from single particle radiation (including both direct ionization and indirect ionization effects), dose enhancement effects, and displacement damage effects. MRED simulations have also helped to identify new single event upset mechanisms not previously observed by experiment, but since confirmed, including upsets due to muons and energetic electrons.
作者: Robert A. Reed,Robert A. Weller,Marcus H. Mendenhall,Daniel M. Fleetwood,Kevin M. Warren,Brian D. Sierawski,Michael P. King,Ronald D. Schrimpf,Elizabeth C. Auden
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To provide a detailed description of the structure of MRED and the implementation of the simulation of physical processes used to simulate radiation effects in electronic devices and circuits, and to demonstrate its ability to predict and describe basic physical phenomena associated with irradiation of electronic circuits and devices.

MRED enables a broad range of validated simulation and analysis capabilities that facilitate the computation of energy deposition and transport in microelectronic materials and devices. The combination of MRED simulations and a targeted experimental test campaign can provide more accurate error rate calculations for a broad range of devices and integrated circuits in the space environment than was previously possible using traditional methods.

The technical and application constraints of the experiments, as well as potential areas for optimization, are not explicitly mentioned in the provided text.

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