研究目的
Investigating the electrical properties evolution of thin films deposited from pure vapor of Tetramethylsilane (TMS) and TMS/oxygen mixture.
研究成果
The electrical characterization results suggested that conduction is dipolar (for transient regime) and limited by space charge without traps (for permanent regime). The addition of high oxygen proportion could improve the electrical properties by reducing probably defects in the film.
研究不足
The explored voltage range must be raised at least three decades to confirm the presence of a space charge mechanism in the films. A variation study of the electric current as a function of the films thickness would be interesting.
1：Experimental Design and Method Selection:
Thin films were deposited at ambient temperature in a distributed electronic cyclotron resonance (RCER) plasma reactor. The microwave plasma frequency excitation was
2：45 GHz and the working power was set to 400 W. Sample Selection and Data Sources:
Films were deposited from pure TMS vapors and mixed with oxygen proportions on metalized glass substrates.
3：List of Experimental Equipment and Materials:
The reactor is equipped with eight magnets arranged alternately with eight antennas cooled by a water circulation. Electrical measurements were carried out using a Keithley 6512 electrometer.
4：Experimental Procedures and Operational Workflow:
MIM (Metal-Insulator-Metal) structures were obtained by deposing aluminum electrodes on these films using vacuum evaporation technique.
5：Data Analysis Methods:
The evolution of the charging current as function of the polarization time was analyzed.
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