研究目的
Investigating the coalescence process of SiGe nano-pillars grown on a SiO2 based nano-template, characterizing them at different stages of the coalescence process.
研究成果
The coalescence of SiGe nano-pillars was successfully studied, showing that individual pillars merge into larger grains above 30 nm thickness. High degrees of macroscopic strain relaxation were obtained, and defects such as stacking faults and twins were identified at the early stages of nano-pillar coalescence.
研究不足
The study was limited to SiGe nano-pillars with thicknesses ranging from 20 to 35 nm. The generation of defects such as stacking faults or twins was inherent to the process itself.
1：Experimental Design and Method Selection:
The study used a 300 mm Reduced Pressure-Chemical Vapour Deposition tool for the selective epitaxy of SiGe 25% nano-pillars.
2：Sample Selection and Data Sources:
Slightly p-type doped, nominally on-axis 300 mm bulk Si(001) wafers with a 20 nm thick thermal SiO2 layer were used.
3：List of Experimental Equipment and Materials:
A Panalytical X'Pert tool for XRD, a Bruker Dimension FastScan platform for AFM, a Bruker Dimension Icon SSRM-HR platform for SSRM, and a JEOL 3010 microscope for TEM.
4：Experimental Procedures and Operational Workflow:
SiGe nano-pillars of different thicknesses were grown and characterized by AFM, XRD, SSRM, and TEM.
5：Data Analysis Methods:
Gaussian fits were used to estimate the SiGe peak position from XRD data, and particle analysis of AFM scans was performed using Nanoscope Analysis software.
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Dimension Icon SSRM-HR
Scanning Spreading Resistance Microscopy platform
Bruker
Used for contact mode SSRM measurements.
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JEOL 3010
Transmission Electron Microscope
JEOL
Used for cross-sectional TEM.
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X'Pert
X-Ray Diffraction tool
Panalytical
Used for XRD experiments to access the Ge concentration and the macroscopic degree of strain relaxation.
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Dimension FastScan
Atomic Force Microscopy platform
Bruker
Used for tapping mode AFM measurements.
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Epsilon 3200
Reduced Pressure – Chemical Vapor Deposition tool
ASM America
Used for the selective growth of SiGe nano-pillars.
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PIPS II
Precision Ion Polishing System
Gatan
Used for preparing TEM lamella.
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