研究目的
To investigate the influence of conditions for rf magnetron sputtering used to obtain ZnO films on the parameters of structures on their basis, with special emphasis on the increase in intensity of UV emission at wavelength λ = 374 nm corresponding to the emission of an 1LO-phonon-coupled exciton.
研究成果
The study demonstrated that the conditions for rf magnetron sputtering significantly influence the photoluminescence and electroluminescence spectra of n-ZnO/p-GaN structures. Optimizing the deposition parameters can enhance the UV emission intensity, which is crucial for applications in optoelectronic devices.
研究不足
The study is limited by the specific conditions of rf magnetron sputtering and the types of substrates used. The influence of defects on the emission characteristics may vary with different preparation methods or materials.
1：Experimental Design and Method Selection:
The study involved rf magnetron sputtering of ZnO films on different substrates in an Ar + O2 gas mixture. The influence of deposition parameters on film properties was examined.
2：Sample Selection and Data Sources:
Samples included p-GaN layers and n-ZnO films. The parameters of p-GaN layers were studied by measuring the Hall coefficient, taking the photoluminescence spectrum, and applying atomic force microscopy.
3：List of Experimental Equipment and Materials:
Equipment included a YAG laser for PL spectra, an SDL-2 diffraction spectrometer for EL spectra, and AFM for surface morphology examination.
4：Experimental Procedures and Operational Workflow:
ZnO films were prepared by rf magnetron sputtering. The PL and EL spectra were taken at various temperatures and voltages to study emission characteristics.
5：Data Analysis Methods:
The PL and EL spectra were analyzed to determine the influence of defects on emission intensity and wavelength.
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