摘要： We investigate the crystal quality of epitaxy lateral overgrowth (ELOG) AlN layers and the performance of optical pumping AlGaN-based deep-ultraviolet (DUV) laser diodes (LDs) on two different patterned AlN templates upon sapphire substrate. The full width at half maximum values of (0002) and (10 1(cid:2)2) X-ray diffraction rocking curves of the ELOG AlN layer on the nano-net-patterned AlN template are 76 and 306 arcsec, and the values of that on the nano-trench-patterned AlN template are 114 and 357 arcsec, respectively. Nevertheless, the threshold power density (Pth) of the 272-nm lasing from the multiple quantum wells (MQWs) on the nano-trench-patterned AlN template is 11% lower than that on the nano-net-patterned AlN template. The reason is that the continuous low threading dislocation density (TDD) MQWs zones above the ELOG coalescent areas upon trenched patterns are in parallel with the stimulated light emission direction. When light resonates through the continuous low TDD MQWs zones, it has higher optical gain and less non-radiative recombination than the case on the nano-net-patterned AlN template where the low TDD MQWs zones are discontinuous on the light path. The results indicate that not only the crystal quality but also the TDD distribution originated from the ELOG on the patterned templates have crucial influence on the Pth, and trench-patterned template can improve the performance of waveguide LDs with Fabry-Perot cavities.