研究目的
To present and demonstrate an improved electrical method for extracting device channel thermal resistance (Rth) for a wide power range based on dc and discrete-pulsed measurements at room and elevated temperatures.
研究成果
The discrete-pulsed current versus time waveforms for multiple VDS method allowed us to use an arbitrarily long interval between applied pulses, to eliminate the cumulative effect, while also enabling the extraction of current near the start of the pulse, before the degradation. The resulting Rth extracted from the method presented here is more accurate than traditional pulsed I–V methods.
研究不足
The possibility that at time t < 900 ns, the device may already have suffered some self-heating, leading to the current degradation. This would result in slight underestimation of Rth for the devices.
1：Experimental Design and Method Selection:
The method compares the dc to discrete-pulsed characteristics and estimates the effective increase in channel temperature under dc biasing conditions.
2：Sample Selection and Data Sources:
GaN HEMTs on three different substrates (free-standing GaN, Si (111), and sapphire) and a vertical GaN CAVET on sapphire substrate were used.
3：List of Experimental Equipment and Materials:
Keithley 4200SCS parametric analyzer, heated chuck.
4：Experimental Procedures and Operational Workflow:
DC I–V and IDS versus t waveforms were measured from temperatures varying from room temperature (20 °C) to 200 °C with an interval of 25 °C. A stabilization time of 20 min was allowed for each chuck temperature change.
5：Data Analysis Methods:
The discrete IDS versus t measurements were performed for a series of fixed VDS pulses ranging from 1 to 20 V with a voltage interval of 1 V. IDS was extracted at 900 ns from the start of each pulse.
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