研究目的
Investigating the SET response of SOI tri-gate silicon nanowires using direct measurements of current transients and comparing them to simulations to assess their sensitivity to high LET ions.
研究成果
The study demonstrates that SOI tri-gate nanowires have a limited sensitivity to high LET ions, with charge collection mechanisms that intrinsically quench generated SETs. The measurements and simulations show good agreement, indicating that current simulation tools can be used with minor optimizations to simulate such devices.
研究不足
The experimental setup's bandwidth may limit the measurement of true transient durations. The simulations may not fully capture all charge collection mechanisms in nanowires.
1：Experimental Design and Method Selection:
Direct measurements of current transients induced by heavy ions in SOI tri-gate nanowires.
2：Sample Selection and Data Sources:
NMOS NanoWire Field Effect Transistors (NWFETs) fabricated at CEA-LETI, Grenoble, France.
3：List of Experimental Equipment and Materials:
High bandwidth oscilloscope, heavy ion beams from GANIL, and a setup optimized for high frequency measurements.
4：Experimental Procedures and Operational Workflow:
Devices irradiated in the off-state with heavy ions, and transient signals recorded.
5：Data Analysis Methods:
Analysis of SET duration and integrated charge values, comparison with Monte-Carlo and TCAD simulations.
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