研究目的
Investigating the numerical optimization of ultra-thin Cu (In1-xGax) Se2 solar cells to improve power conversion efficiency under AM1.5 illumination condition, 300K.
研究成果
The numerical investigation of ultra-thin CIGS solar cell has led to obtaining a maximum conversion efficiency of 21.74 %. The optimization of ultra-thin CIGS model was based on investigating the thickness dependence and carrier concentration of the semiconductor layers such as ZnO:Al, i-ZnO, CdS, and CIGS materials impact on the output parameters under AM1.5 illumination condition, 300K.
研究不足
The technical and application constraints include the surface recombination velocity of CdS/CIGS heterojunction interface as a limiting factor for high CIGS cell performance. The incomplete absorption of light occurs when the absorber thickness is below 1 μm.
1：Experimental Design and Method Selection:
Silvaco TCAD tools were used to construct and calibrate the CIGS cell structure. The simulation is based on an experimental study certified by the CalLab at Fraunhofer ISE.
2：Sample Selection and Data Sources:
The considered CIGS model consists of aluminum (Al)-doped ZnO and undoped zinc oxide (i-ZnO) as a window layer followed by an n-type thin cadmium sulfide (CdS) and a p-type copper indium gallium selenide (CIGS) as a buffer and absorber layer, respectively.
3：List of Experimental Equipment and Materials:
The nanostructured Ag, Au, or Cu back mirror is used to replace conventional Mo back contact.
4：Experimental Procedures and Operational Workflow:
The simulation program considers the recombination model Shockley–Read–Hall (SRH) and carrier mobility model Concentration-dependent mobility model (CONMOB). For heavily doped layers, Auger recombination (AUGER) is also invoked in the simulation.
5：Data Analysis Methods:
The simulation results were adjusted to the published research work results to validate the model and the physical properties of materials.
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