研究目的
Investigating the influence of Al-N simultaneous doping and thermal annealing on the properties of ZnO films for achieving p-type conductivity and improving the performance of ZnO-based ultraviolet detectors.
研究成果
Thermal annealing of ZnO:Al,N-Zn3N2 films leads to the decomposition of the Zn3N2 phase and improvement in the crystal quality of ZnO:Al,N films. However, it does not result in p-type conductivity due to the generation of donor-type defects and unfavorable nitrogen chemical states. Further research is needed to explore annealing in different atmospheres for achieving p-type conductivity.
研究不足
The study did not achieve p-type conductivity in ZnO films through thermal annealing of ZnO:Al,N-Zn3N2 films due to the generation of donor-type defects and the formation of nitrogen chemical states that do not favor p-type conductivity.
1：Experimental Design and Method Selection:
Highly-doped ZnO:Al,N films were grown on Si substrates by magnetron sputtering using a layer-by-layer growth technique. Thermal annealing was performed at 600 °C in atmospheric conditions.
2：Sample Selection and Data Sources:
Films were grown on p-Si substrates cleaned in acetone, ethanol, and deionised water.
3：List of Experimental Equipment and Materials:
ZEISS EVO 50 XVP SEM apparatus with EDX device, Horiba Jobin-Yvon T64000 triple spectrometer for Raman measurements, UHV-Analysis-System (SPECS, Germany) for XPS, and RSM-500 spectrometer for XES.
4：Experimental Procedures and Operational Workflow:
Films were characterized by XRD, EDX, Raman scattering, PL, XPS, and XES before and after annealing.
5：Data Analysis Methods:
XRD patterns were analyzed for crystal structure, EDX for elemental composition, Raman and PL spectra for optical properties, and XPS and XES for electronic structure.
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