研究目的
To characterize the dislocation distribution in partially relaxed Si0.92Ge0.08/Si(001) films and establish a direct correlation between dislocations revealed by transmission electron microscopy and the measured lattice tilt distribution.
研究成果
The study successfully establishes a direct correlation between dislocation positions from TEM and tilt-angle maps from SXDM, providing a new method for characterizing dislocation networks in heteroepitaxial films.
研究不足
The study is limited to partially relaxed SiGe/Si films with low Ge content to avoid complex dislocation distributions. The method's applicability to other systems is suggested but not demonstrated.
1：Experimental Design and Method Selection:
The study combines transmission electron microscopy (TEM) and scanning x-ray diffraction microscopy (SXDM) to analyze dislocation distributions in SiGe/Si films.
2：Sample Selection and Data Sources:
A 600-nm Si
3：92Ge08/Si(001) film is grown by high-temperature CVD process. List of Experimental Equipment and Materials:
FEI Tecnai Osiris transmission electron microscope, focused ion beam (FIB), European Synchrotron Radiation Facility beamline ID
4：Experimental Procedures and Operational Workflow:
TEM analysis is performed on a lamella extracted from the film, and SXDM is used to measure tilt-angle maps on the same region.
5：Data Analysis Methods:
A Monte Carlo algorithm is used to fit the experimental tilt-angle maps by adjusting the Burgers vectors of dislocations.
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