研究目的
Investigating the sensing properties of EIS pH sensors with arrayed patterns manufactured by integrating nano imprint technology (NIL) and CMOS process.
研究成果
The EIS pH sensors with arrayed patterns fabricated by nano imprint technology showed improved sensing properties compared to those with single structure. High dense and square type patterns optimized the sensor performance, suggesting potential for future EIS or ISFETs bio-chemical sensing applications.
研究不足
The study mentions the poor long-term stability of the dielectric SiO2 used, suggesting potential areas for optimization in future research.
1：Experimental Design and Method Selection:
The study integrates nano imprint technology (NIL) and CMOS process to fabricate EIS pH sensors with arrayed patterns. The patterns were studied by AFM and SEM.
2：Sample Selection and Data Sources:
p-type (100) Si wafer was used. The arrayed patterns were made of line and square at about ～200–400nm with a width/space ratio of about ～1/1-1/
3：List of Experimental Equipment and Materials:
AFM, SEM, LPCVD for SiO2 deposition, E-Gun evaporator for back-side contact metal deposition, SU-8 for defining sensing areas.
4：Experimental Procedures and Operational Workflow:
Fabrication involved NIL with thermal curable resists (PMMA), RIE dry etching, deposition of SiO2 sensing membrane, and packaging on PCB board with Epoxy.
5：Data Analysis Methods:
Electrical and sensing properties were studied by semiconductor parameter analyzer B1500 with Ag/AgCl reference electrode in solutions.
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