研究目的
To discuss the basic techniques for using GaN transistors in high performance power conversion circuits and to understand the similarities and differences between GaN transistors and power MOSFETs.
研究成果
The chapter concludes by summarizing the driver considerations for high-speed GaN transistors, including gate power loop inductance minimization, ground bounce immunity, high dv/dt immunity for high-side drivers, optimized driver packaging and pin-out, separate control of the turn-on and turn-off, and regulation of gate drive supply voltage. The next chapter will focus on layout techniques and ways to minimize the parasitic inductances that have increased importance due to the higher switching speed of GaN transistors.
研究不足
The chapter does not explicitly mention the limitations of the research or experiments conducted.
1：Experimental Design and Method Selection:
The chapter discusses the basic techniques for using GaN transistors in high performance power conversion circuits, including driving a GaN transistor, layout techniques for high-efficiency GaN transistor circuits, and modeling and measuring high power-density GaN transistor-based circuits.
2：Sample Selection and Data Sources:
The chapter examines two structures of GaN transistors: enhancement-mode transistors using a p-GaN type gate, and the two-transistor cascode configuration.
3：List of Experimental Equipment and Materials:
The chapter mentions GaN transistors and MOSFETs, gate drivers, and various circuit components used in power conversion circuits.
4：Experimental Procedures and Operational Workflow:
The chapter describes the process of driving GaN transistors, including the gate drive voltage requirements, bootstrapping and floating supplies, dv/dt and di/dt immunity, ground bounce, common mode current, and gate driver edge rate.
5：Data Analysis Methods:
The chapter discusses the use of figures of merit (FOM) to compare GaN transistors and MOSFETs, and the analysis of gate charge components and their definitions.
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