研究目的
To develop a CMOS-compatible crack-free process for the deposition of nitride-based films on 200- and 300-mm wafers for Si-PICs, enabling the generation of a frequency continuum spanning 1515–1575 nm via self-phase modulation.
研究成果
The study demonstrates CMOS-compatible crack-free Si3N4 waveguides featuring full process compatibility with Si photonic integrated circuits, enabling the generation of a frequency continuum over the C-band. This work paves the way toward integrating broadband sources on existing Si-based photonics circuits.
研究不足
The process requires precise control of tensile strain during deposition to prevent cracks. The nonlinearity of the silicon nitride obtained is slightly higher than when 1200 °C annealing is applied.
1：Experimental Design and Method Selection:
The study focuses on the fabrication and testing of silicon-nitride-on-insulator nonlinear photonic circuits. A process was developed to fabricate low-loss crack-free Si3N4 films for Kerr-based nonlinear functions.
2：Sample Selection and Data Sources:
The fabrication starts with the 3-μm-thick thermal oxidation of the silicon substrate. Silicon nitride layers are deposited via low pressure chemical vapor deposition (LPCVD) in two steps.
3：List of Experimental Equipment and Materials:
Equipment includes a ASML-300 stepper for DUV lithography, a vertical chamber for deposition, and a 300-mm reactor for dry etching. Materials include NH3 and dichlorosilane (SiH2Cl2) as precursor gases.
4：Experimental Procedures and Operational Workflow:
The process involves deposition, lithography, dry etching, and encapsulation. Optical measurements were carried out to evaluate linear propagation losses and nonlinear response.
5：Data Analysis Methods:
The nonlinear parameter γ and the nonlinear index n2 were derived from four-wave mixing measurements.
独家科研数据包，助您复现前沿成果，加速创新突破
获取完整内容
