研究目的
Investigating the strain effect on the electrical properties of highly doped n-type single crystalline cubic silicon carbide (3C-SiC) transferred onto a glass substrate for mechanical sensors and mobility enhancement.
研究成果
The study demonstrates a negative gauge factor of approximately (cid:1)8.6 in the longitudinal [100] direction of n-type 3C-SiC, consistent with theoretical analysis based on electron transfer effect. This finding opens up opportunities for MEMS applications in harsh environments and bio-sensing.
研究不足
The study focuses on highly doped n-type 3C-SiC and its piezoresistive effect under strain. The applicability to other doping types or materials is not explored.
1：Experimental Design and Method Selection:
The study employed an anodic bonding technique to transfer highly doped n-type single crystalline cubic silicon carbide (3C-SiC) onto a 6-inch glass substrate. The piezoresistive effect was characterized under strain.
2：Sample Selection and Data Sources:
Single-crystalline 3C-SiC thin films were grown on 6-inch Si(100) substrates using a low pressure chemical vapor deposition process (LPCVD).
3：List of Experimental Equipment and Materials:
Agilent B1500A for current-voltage (I–V) characteristic measurement, NANOMETRICS Nanospec/AFT 210 for thickness measurement, EVG 520IS hot embosser for anodic bonding process.
4：Experimental Procedures and Operational Workflow:
The 3C-SiC film was smoothed and bonded onto glass using anodic bonding. SiC resistors were fabricated and characterized under strain using the bending beam method.
5：Data Analysis Methods:
The gauge factor was calculated based on resistance change under strain. Theoretical analysis was performed based on electron transfer phenomenon.
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