1：Experimental Design and Method Selection:

The hot-wire CVD technique was used to deposit silicon oxycarbide thin films on p-type polished crystalline silicon wafers and copper sheets. Monomethyl-silane (MMS) was used as a single precursor of silicon and carbon atoms, with hydrogen and oxygen as reactant gases. A tantalum filament was used as a catalyst material.

2：Sample Selection and Data Sources:

Films were deposited on p-type polished crystalline silicon wafers with (100) orientation and on copper sheets.

3：List of Experimental Equipment and Materials:

A turbomolecular pump (Varian model V-550), IR detector (Chino model IR-AHS), throttle valve (MKS model 253B), scanning electron microscopy (SEM) Carl Zeiss-AURIGA, PANalytical XPERT-PRO diffractometer, Thermo-Nicolet-Nexus-470 FTIR, Thermo Scientific XPS, and Nanolog-Horiba Jobin Yvon PL system.

4：Experimental Procedures and Operational Workflow:

The filament was maintained at 1800°C, and the chamber pressure was controlled at 0.1 Torr. The hydrogen and MMS fluxes were fixed at 10.0 and 3.0 sccm, respectively, while the oxygen flow was varied between 0 to 1.0 sccm. Films were deposited at substrate temperatures of 200°C and 300°C for 30 min.

5：1 Torr. The hydrogen and MMS fluxes were fixed at 0 and 0 sccm, respectively, while the oxygen flow was varied between 0 to 0 sccm. Films were deposited at substrate temperatures of 200°C and 300°C for 30 min. Data Analysis Methods:

5. Data Analysis Methods: Film thickness and refractive index were obtained by ellipsometry. Surface morphology was observed by SEM, and elemental composition was obtained through EDS. XRD was used to confirm the presence of nanocrystalline material. FTIR and XPS were used to analyze the bonds and silicon chemical state, respectively. PL, PLE, and TRPL measurements were carried out to study the luminescence properties.