研究目的
To improve the performances of AlGaN solar-blind avalanche photodiodes (APD) by proposing a separate absorption and multiplication AlGaN APD with a p-hBN layer.
研究成果
The p-hBN/AlGaN APD significantly reduces the breakdown voltage and maintains solar-blind characteristics at large reverse biases, with lower noise levels compared to conventional AlGaN APDs. This design offers a promising approach for enhancing the performance of solar-blind UV detectors.
研究不足
The study is based on simulations, and the practical implementation of p-hBN/AlGaN APDs may face challenges related to material growth and device fabrication.
1：Experimental Design and Method Selection:
The study involves the simulation of AlGaN APDs with a p-hBN layer to evaluate their performance compared to conventional AlGaN APDs.
2：Sample Selection and Data Sources:
The simulations are based on theoretical models and parameters similar to those in previously published work.
3：List of Experimental Equipment and Materials:
The study uses the atlas program for simulation, with physical models and parameters as per recent work.
4：Experimental Procedures and Operational Workflow:
The simulation involves comparing the current-voltage curves, gain, spectral responsivities, and noise characteristics of p-hBN/AlGaN APDs with conventional AlGaN APDs under different reverse biases.
5：Data Analysis Methods:
The analysis includes evaluating the reduction in breakdown voltage, gain enhancement, and noise characteristics of the proposed APD structure.
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