研究目的
Investigating the sub-nanosecond avalanche switching of Si and ZnSe bulk semiconductor structures initiated by high-voltage pulses with steep ramp.
研究成果
Steep high-voltage pulses initiate controllable and repetitive 100-ps avalanche switching of bulk semiconductor samples with planar disk geometry and large-area ohmic contacts. This method can be used for generation of non-equilibrium electron–hole plasma in a wide class of semiconductor materials.
研究不足
The experiments did not achieve successful avalanche switching for bell-shaped triggering pulses with effective voltage ramp 2–8 kV/ns used previously in experiments with diodes.
