摘要： Residual stress generated in grinding process of monocrystalline silicon can cause the wafer warpage, and di?culties in subsequent processes such as holding and scribing. It can also lead to the formation of cracks and the occurrence of corrosion, which is harmful for electrical performance of silicon component. In this study, with the method of step-wire wet etching, the phase transformation and distribution of residual stress in ground silicon wafer were examined by confocal laser micro-Raman spectroscopy. As the etching depth going down, the residual stress exhibits in the trends of decreasing of compressive stress and following a scatter distribution of tensile stress. During the nano-grinding processes of monocrystalline silicon, the generation mechanism of residual stress is computed by a series of the molecular dynamic (MD) simulation. Subsurface damage (SSD) in the form of phase-transformed silicon is observed, and the depth of SSD varies by the depth of cut. The volume shrinkage of phase-transformed silicon is also studied to explain the grinding mechanism and the reason for inducing residual stress of ground silicon. By adopted the Stony theory and volume shrinkage rate of amorphous phase from MD results, a theoretical model is established to determine the trend of compressive stress in subsurface of ground silicon.