研究目的
Investigating the microwave dielectric properties of B and N co-doped SiC nanopowders prepared by combustion synthesis.
研究成果
B and N co-doping can tailor the dielectric properties of SiC, with the 5% B and 15% N co-doped SiC sample revealing the greatest values in ε′ and ε″ and better microwave absorption performance. The mechanism of the dielectric properties improved by co-doping was discussed.
研究不足
The study focuses on the microwave dielectric properties of B and N co-doped SiC nanopowders, but does not explore other potential dopants or synthesis methods that could further optimize the dielectric properties.
1：Experimental Design and Method Selection:
Combustion synthesis under a nitrogen atmosphere from the Si/C system, using α-Si3N4 powder and B powder as solid nitriding agent and dopant, respectively.
2：Sample Selection and Data Sources:
Silicon powder and carbon black were used as raw materials. Boron powder and Si3N4 powder were used as dopant and solid nitriding agent, respectively.
3：List of Experimental Equipment and Materials:
X-ray diffractometer (XRD, D8 Advance, Bruker, Germany), field emission scanning electron microscopy (FESEM, JSM-7500F, JEOL, Japan), X-ray photoelectron spectroscopy (XPS, K-Alpha, Thermo Scientific), PNA network analyzer (Agilent Technologies E8362B, Palo Alto, CA).
4：Experimental Procedures and Operational Workflow:
The starting powders were mixed in ethanol for 6 h and dried at 60 oC. Then, the dried powders were calcined at 1400 oC in a resistance heating graphite furnace.
5：Data Analysis Methods:
The dielectric parameters were determined in the frequency range of 8.2-12.4 GHz.
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