研究目的
Investigating the feasibility of using a unique phase-fluid based photoresist-stripper in commercial semiconductor resist removal process steps.
研究成果
Standard photoresist films can be successfully removed with intelligent fluid? phase-fluid solutions, with process times compliant with mass volume production throughput requirements. Process fluid temperatures in the 40c-60c range and the addition of megasonic range acoustic energy significantly reduce total strip process times.
研究不足
Variations in rinsing conditions affected the conclusiveness of contact angle measurements. Further testing with an active rinse and automated drying sequence is needed.
1：Experimental Design and Method Selection:
The study involved two phases of experiments to evaluate the reaction between photoresist types and intelligent fluid? formulas, followed by optimization of process parameters including temperature and megasonic acoustic energy.
2：Sample Selection and Data Sources:
Five different photoresist materials applied to 200mm semi-standard silicon wafers were tested under various conditions.
3：List of Experimental Equipment and Materials:
Bowl Meg process chamber with a sapphire megasonic transducer, intelligent fluids? formulations if-A through if-E.
4：Experimental Procedures and Operational Workflow:
Process fluid temperatures were maintained at 20c, 40c, and 60c, with megasonic energy introduced at 1.5W/cm
5：5W/cmData Analysis Methods:
2.
5. Data Analysis Methods: Photoresist stripping results were quantified through visual inspection and contact angle measurement.
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