研究目的
To explore the potential applications of GaN-based crystals in nano-electronics and optoelectronics, focusing on the fabrication and characterization of GaN-based thin films and nanostructures.
研究成果
The special issue highlights the advancements in the fabrication of nanostructured GaN-based compounds for nano-electronic and optoelectronic applications, emphasizing the importance of high-quality GaN-based compounds for device applications to ensure the mean-free path of carriers is longer than the size of the device scale. The collected papers present various technologies to improve the quality and efficiency of GaN/AlGaN heterostructures, revealing the perspectives of GaN quantum device applications.
研究不足
The special issue does not detail specific technical constraints or areas for optimization in the experiments conducted across the six papers.
The special issue consists of six papers that cover various technologies, both theoretical and experimental, to improve the quality and efficiency of GaN/AlGaN heterostructures for nano-electronic and optoelectronic devices. The methodologies include the study of interface formation of AlN on sapphire substrate by EVPE, investigation of the role of AlN insertion layer in stress control of GaN on Si(111) substrate by MOCVD, effects of a corona-discharge plasma treatment on the performance of an AlGaN/GaN metal-oxide-semiconductor high-electron mobility transistor, development of a simple behavioral model for packaged cascode gallium nitride (GaN) field-effect transistors (FETs), review of recent progress in growth aspects of group III-nitride heterostructures for deep ultraviolet (DUV) light-emitting diodes (LEDs), and theoretical evaluation of the light extraction efficiency (LEE) of GaN-based nanorod blue light-emitting diode (LED) structures using finite-difference time-domain (FDTD) simulations.
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