研究目的
Investigating the impact of the moir′e pattern on the optical properties of intralayer excitons in a MoSe2/MoS2 heterobilayer encapsulated in hexagonal boron nitride.
研究成果
The study demonstrates the impact of the moir′e pattern on the optical spectra of the intralayer exciton species in a MoSe2/MoS2 heterobilayer. The potential fluctuations resulting from locally different atomic registries split the trion and exciton transitions into two peaks related to optically active local minima of the moir′e potential. The findings are consistent with theoretical predictions and provide a clear optical fingerprint of the effect of the moir′e potential on intralayer excitons.
研究不足
The spatial resolution of far-field optical measurements is not sufficient to resolve the spatial variation of the emission energy of excitons located at different potential minima. The study is limited to the observation of the splitting of the exciton and trion lines in PL and reflectivity spectra.
1：Experimental Design and Method Selection:
The study involves the fabrication of a MoSe2/MoS2 heterobilayer encapsulated in hexagonal boron nitride (hBN) and the investigation of its optical properties through photoluminescence (PL) and reflectivity spectroscopy.
2：Sample Selection and Data Sources:
The samples were prepared by all-dry deterministic transfer of mechanically exfoliated flakes.
3：List of Experimental Equipment and Materials:
A helium flow cryostat, a CW frequency doubled solid state laser, an optical parametric oscillator (OPO), a mode-locked Ti:sapphire laser, a spectrometer equipped with a liquid nitrogen cooled charge-coupled device (CCD) camera, and a streak camera were used.
4：Experimental Procedures and Operational Workflow:
The PL and reflectivity spectra were measured at T = 5 K. Time-resolved PL measurements were performed using a CW frequency doubled solid state laser emitting at 532 nm.
5：Data Analysis Methods:
The PL decay times were extracted by fitting the decay curves with a single exponential convoluted with a Gaussian curve to account for the instrument response function.
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