研究目的
Investigating the electronic properties of graphene containing point defects (adsorbed atoms, substitutional atoms, vacancies) within the Lifshitz model, focusing on the electron spectrum transformation, impurity resonance near Dirac points, and the metal-dielectric transition.
研究成果
The study concludes that point defects in graphene can lead to significant changes in its electronic properties, including the formation of impurity resonances near Dirac points, opening of transport gaps, and metal-dielectric transitions. The minimum conductivity is found to depend on the concentration of defects, challenging the notion of its universality.
研究不足
The study is theoretical, focusing on the Lifshitz model for point defects in graphene. It does not account for all types of defects or interactions, and the numerical modeling may not capture all real-world complexities of graphene with defects.