研究目的
Investigating the fabrication and electrical characteristics of ZnO-La2O3 thin film transistors using a sol-gel dip coating technique.
研究成果
The ZnO-La2O3 TFTs fabricated using sol-gel dip coating exhibit improved electrical properties, including high field effect mobility and ON/OFF current ratio, making them suitable for optoelectronic applications.
研究不足
The study is limited by the sol-gel dip coating technique's dependency on precursor concentration and annealing conditions, which may affect film uniformity and electrical properties.
1：Experimental Design and Method Selection:
The study employs a sol-gel dip coating technique for fabricating ZnO thin films and thermal deposition for La2O3 dielectric layers.
2：Sample Selection and Data Sources:
ZnO thin films are prepared from zinc acetate dehydrate solutions at concentrations of
3：1M, 3M, and 5M. List of Experimental Equipment and Materials:
Includes zinc acetate dehydrate, 2 Methoxyethanol, Methanolemaine (MEA), glass substrates, and Al for electrodes.
4：Experimental Procedures and Operational Workflow:
The process involves stirring the precursor solutions, dip coating on glass substrates, drying, annealing in oxygen atmosphere, and characterization by XRD, EDX, and SEM.
5：Data Analysis Methods:
Electrical parameters are evaluated from I-V characteristics and other measurements.
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