研究目的

Investigating the effects of surface and interface stresses on the development of thin ?lm stress during the growth of polycrystalline ?lms, focusing on the initial and ?nal growth stages.

研究成果

The study concludes that surface and interface stresses significantly influence thin ?lm stress development during growth, with surface stress playing a crucial role in the initial island growth stage and adatom insertion into grain boundaries being the primary mechanism for compressive stress development in the late stage of growth. The findings suggest that wafer curvature experiments may not accurately measure the true stress state inside thin ?lms during early growth stages.

研究不足

The study is limited by the timescale of molecular dynamics simulations, making it impractical to simulate the relaxation process during growth interrupt accurately. Additionally, the high deposition rates and temperatures used in simulations may not fully replicate experimental conditions.