摘要： Wide band gap power semiconductor devices have superiority in fast switching operation, when compared to Si IGBT and PiN diodes for voltage range from several hundred to several kilo volts. The fast switching operation gives high di/dt and dv/dt, which results in inducing surge voltage and EMI noise for poorly designed circuit. The precise dynamical model of power device and peripheral component is necessary in estimating these transient phenomenon. This paper presents the dynamical model of wide bandgap power semiconductor devices, package of power device, and circuit wiring. The fixture configurations to extract model parameter is also presented. The static blocking and conducting condition for power device is characterized with curve tracer. The terminal capacitance of power device dominates switching dynamic terminal characteristics. Then, voltage dependency of capacitances are characterized with the developed fixture, which can cope with normally on transistor characterization. The electro magnetic analysis of package and circuit to identify parasitic component is also addressed in the paper. The switching behaviors of power device and the phenomenon in the circuit are discussed based on the model and extracted model parameters.