研究目的
To fabricate and characterize a ZnO Quantum Dot (QD)-based photojunction ?eld-effect transistor (photo-JFET) for the detection of ultraviolet (UV) spectrum, analyzing the effects of photojunction between the ZnO Quantum Dots (QDs) and deep work function transparent MoO2 under UV illumination.
研究成果
The photojunction FET fabricated on the glass substrate exhibits transistor characteristics under the illumination of different values of the optical power densities, with the optical power densities working as a floating gate for the device. The junction behavior like the Schottky junction limits the dark current flow between the source and drain of the photojunction FET.
研究不足
The study focuses on the fabrication and characterization of a specific type of photodetector and may not cover all potential applications or variations in device design.
1：Experimental Design and Method Selection:
The study involved the fabrication of a photo-JFET on a glass substrate using interdigitated electrodes (Ag) followed by ZnO QDs layer and MoO2. The effects of photojunction under UV illumination were analyzed.
2：The effects of photojunction under UV illumination were analyzed.
Sample Selection and Data Sources:
2. Sample Selection and Data Sources: ZnO QDs were synthesized under a nitrogen atmosphere by solution processing method. The thin film of the colloidal ZnO QDs was deposited on the glass substrate by spin coating method.
3：List of Experimental Equipment and Materials:
High purity Ag and MoO2 were deposited by thermal evaporation. The thickness was measured by Reflectometer (F-20 UV) thin film analyzer. The particle size was analyzed by transmission electron microscopy (TEM).
4：Experimental Procedures and Operational Workflow:
The solution of colloidal ZnO QDs was filtered using PVDF membrane (0.22 μm) and deposited on the glass substrate by spin coating method. The process was repeated multiple times to achieve the desired thickness.
5：22 μm) and deposited on the glass substrate by spin coating method. The process was repeated multiple times to achieve the desired thickness.
Data Analysis Methods:
5. Data Analysis Methods: The rectifying behavior of ZnO QDs and MoO2 film was analyzed. The current density versus voltage relationship was measured by semiconductor parameter analyzer (B1500, Keysight) under the illumination of the monochromatic UV light.
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