研究目的
Investigating the necessity of actual measurement of thermophysical properties for accurate thermal design of semiconductor devices, considering anisotropy, size effect, and bonding state.
研究成果
The study concludes that accurate thermal design of semiconductor devices requires actual measurement of thermophysical properties, considering anisotropy, size effects, and bonding conditions. It emphasizes the importance of selecting appropriate measurement methods for precise thermal management.
研究不足
The study highlights the limitations of using nominal or literature values for thermal design without considering material anisotropy, size effects, and bonding conditions, which can lead to inaccurate simulation results.
1：Experimental Design and Method Selection:
Various methods including the flash method, steady heat flow method, AC calorimetry, 3ω method for thin film, and transient thermal measurement for electronic devices were employed to measure thermal properties.
2：Sample Selection and Data Sources:
Samples included polyimide films, dielectric films (SiO2, SiNx), and copper-solder joint layers.
3：List of Experimental Equipment and Materials:
Instruments and materials specific to each measurement method were used, such as IR sensors for the flash method and aluminum metal lines for the 3ω method.
4：Experimental Procedures and Operational Workflow:
Detailed procedures for each method were followed, including specimen preparation, heating, and temperature measurement.
5：Data Analysis Methods:
Thermal conductivity and resistance were calculated from measured data, with specific attention to anisotropy and size effects.
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