研究目的
To investigate and optimize the creation of nitrogen-vacancy (NV) centres in diamond through simultaneous electron irradiation and annealing at high temperature.
研究成果
Simultaneous electron irradiation and annealing at high temperature significantly increases the NV centre creation efficiency in diamond, with up to a 117% improvement over consecutive processes. This method offers a promising avenue for enhancing NV densities for applications in sensing and biolabelling.
研究不足
The annealing temperature of 740°C is below the optimum temperatures for NV centre creation (800°C to 900°C). The study is limited to HPHT diamonds with specific nitrogen concentrations.
1：Experimental Design and Method Selection:
The study compared the efficiency of NV centre creation in diamond through simultaneous electron irradiation and annealing ('annealing in situ') versus consecutive irradiation and annealing.
2：Sample Selection and Data Sources:
Five HPHT 1b diamond single crystal samples with < 200 ppm of single nitrogen defects were used.
3：List of Experimental Equipment and Materials:
Custom-built irradiation chamber, confocal microscope (Olympus Fluoview FV3000), supercontinuum laser (NKT Photonics, Fianium WhiteLase), avalanche photodiode detector (Excelitas, SPCM-AQRH-14), SpectraPro spectrometer (Princeton Instruments), Raman microspectrophotometer (CRAIC, Apollo 785), FTIR spectrometer (PerkinElmer Spotlight 400).
4：0). Experimental Procedures and Operational Workflow:
4. Experimental Procedures and Operational Workflow: Samples were irradiated with 2 MeV electrons to a fluence of
5：45×1017 cm-2, with some samples simultaneously annealed at 740°C. Fluorescence and absorption spectroscopy were then performed. Data Analysis Methods:
Fluorescence intensity and NV density were calculated from absorption spectra, with conversion efficiency from nitrogen defects to NV centres estimated.
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