研究目的
Investigating the correlation between the refractive index of SiOxNy ?lms and the frequency response of surface acoustic wave devices to suppress frequency drift caused by dielectric ?lm deposition on an interdigital transducer (IDT) electrode.
研究成果
The study demonstrates that controlling the refractive index of SiOxNy ?lms can effectively suppress frequency drift in SAW devices. The FEMSDA analysis suggests that adjusting the refractive index in accordance with IDT electrode thickness is crucial for maintaining device performance. This approach offers a practical method for enhancing the accuracy of frequency response control in SAW devices.
研究不足
The study is limited to specific ranges of refractive indexes and thicknesses of dielectric ?lms and IDT electrodes. The experimental conditions and materials may not cover all possible variations in SAW device designs.
1：Experimental Design and Method Selection:
Fabricated a one-port resonator and measured the frequency with or without dielectric ?lm deposition on an IDT electrode. Varied the refractive index for each ?lm (SiO2, SiOxNy, or Si3N4).
2：4).
Sample Selection and Data Sources:
2. Sample Selection and Data Sources: Used a 42°Y–X LiTaO3 substrate with an IDT electrode made of Al. Dielectric ?lms were deposited with varying refractive indexes.
3：List of Experimental Equipment and Materials:
Utilized a reactive RF sputtering system with a Si target for dielectric ?lm deposition. Measured refractive indexes by spectroscopic ellipsometry.
4：Experimental Procedures and Operational Workflow:
Deposited dielectric ?lms at room temperature under specific conditions. Observed the shape of the dielectric ?lm by scanning electron microscopy (SEM).
5：Data Analysis Methods:
Estimated the Young’s modulus consistent with the resonant frequency using a ?nite element method spectral domain analysis (FEMSDA). Calculated the frequency response with different refractive indexes.
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