研究目的
Investigating the enhanced magnetoelectric effect and piezoelectric properties in lead-free Bi3.15Nd0.85Ti3O12/La0.7Ca0.3MnO3 nano-multilayers composite thin films.
研究成果
The lead-free BNT/LCMO nano-multilayers exhibit good coexistence of ferroelectric and ferromagnetic behaviors with an enhanced ME response. The strong ferroelectric and ferromagnetic responses and the promising ME coupling effect foreshow the potential application in memory devices, spin devices, sensors and ME devices.
研究不足
The study focuses on the lead-free BNT/LCMO nano-multilayers composite thin films, and the results may not be directly applicable to other multiferroic materials or configurations. The ME effect at room temperature is small due to the paramagnetic nature of LCMO at this temperature.
1:Experimental Design and Method Selection:
Nano-multilayers of BNT/LCMO were grown on LaNiO3 (LNO)-buffered SrTiO3 (STO) using stoichiometric ceramic targets by rf magnetron sputtering. The nano-multilayers with the total thickness of 280 ± 15 nm with 20 periodicities were fabricated with a periodicity of 8 nm/6 nm of ferroelectric layers (BNT)/magnetic sublayers (LCMO).
2:Sample Selection and Data Sources:
The substrates were cleaned ultrasonically in ethanol and acetone and dried with argon gas.
3:List of Experimental Equipment and Materials:
X-ray diffraction (XRD) using a D/max-rA X-ray diffractometer with Cu-Ka radiation, transmission electron microscopy (TEM, FEI Tecnai), RT66A standard ferroelectric test system, Semiconductor Testing System (Keithley 4200-SCS, USA), and Semiconductor Device Analyzer (Agilent B1500A, USA), scanning probe microscope (SPM) (MicroNano D5A), superconducting quantum interference device (SQUID).
4:Experimental Procedures and Operational Workflow:
The process involved deposition of a LaNiO3 buffer layer, followed by LCMO and BNT layers deposition under specific conditions, and annealing in O2 flow.
5:Data Analysis Methods:
Phase identification and crystal orientation by XRD, microstructure and phase structure by TEM, polarization-voltage, current-voltage, and capacitance-voltage properties measurement, switching of polarization by PFM, magnetic properties by SQUID, ME coupling characterization by ME measuring device.
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TEM
FEI Tecnai
FEI
Examination of cross sectional microstructure and phase structure
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Semiconductor Testing System
Keithley 4200-SCS
Keithley
Measurement of electrical properties
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Semiconductor Device Analyzer
Agilent B1500A
Agilent
Measurement of electrical properties
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D/max-rA X-ray diffractometer
Phase identification and crystal orientation study
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RT66A standard ferroelectric test system
Measurement of polarization-voltage, current-voltage, and capacitance-voltage properties
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SPM
MicroNano D5A
MicroNano
Study of switching of polarization
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SQUID
Investigation of magnetic properties
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ME measuring device
Characterization of ME coupling
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