研究目的
To investigate the damage to molybdenum disulfide (MoS2) during the atomic layer deposition (ALD) of high-k dielectrics and to develop a method to reduce such damage using a bi-layered Al2O3/ZrO2 dielectric structure.
研究成果
The bi-layered Al2O3/ZrO2 dielectric structure significantly reduces damage to MoS2 channel layers during ALD, leading to improved electrical performance in FET devices. This approach is promising for future 2D TMDCs-based electronics.
研究不足
The study acknowledges the potential for damage during the initial cycle of ZrO2 deposition using O3, suggesting that even with passivation, some damage may still occur. The effectiveness of the Al2O3 passivation layer is temperature-dependent, with higher temperatures leading to more damage.
1：Experimental Design and Method Selection:
The study involved the ALD of single dielectrics (Al2O3 and ZrO2) and a bi-layered Al2O3/ZrO2 structure on MoS2 layers to investigate damage and electrical performance.
2：Sample Selection and Data Sources:
Single-layer MoS2 films were synthesized using a catalytic chemical vapor deposition (CVD) method.
3：List of Experimental Equipment and Materials:
Equipment included a home-made tube-type furnace CVD reactor, ALD5008 of SNTEK Co. for ALD, and various characterization tools like Raman spectroscopy, PL measurements, XPS, AFM, and FET measurements. Materials included MoCl5, H2S, NaCl, TMA, H2O, O3, and tris(cyclopentadienyl)zirconium.
4：Experimental Procedures and Operational Workflow:
The process involved synthesizing MoS2, depositing dielectrics via ALD under varying conditions, fabricating FET devices, and characterizing the films and devices.
5：Data Analysis Methods:
Data from Raman, PL, XPS, and electrical measurements were analyzed to assess damage and performance.
独家科研数据包，助您复现前沿成果，加速创新突破
获取完整内容
