研究目的
Investigating the photocurrent characteristics of zinc-oxide (ZnO) thin-film transistors (TFTs) prepared using radio-frequency sputtering and spin-coating methods.
研究成果
The sputtered ZnO TFTs had a photoresponsivity of 3.08 mA/W under illumination with 405-nm light while the solution-processed ZnO TFTs had a photoresponsivity of 5.56 mA/W. These results provide useful information for further development of highly transparent optoelectronics based on ZnO films.
研究不足
The study compares only two methods of preparing ZnO films (sputtering and spin-coating) and focuses on their photocurrent characteristics. The potential for optimization in other preparation methods or applications is not explored.
1：Experimental Design and Method Selection:
ZnO films were prepared on SiO2(100 nm)/Si substrates using radio-frequency sputtering and solution spin-coating methods.
2：Sample Selection and Data Sources:
The chemical composition of the films was measured using XPS, transmittance and optical band gap were evaluated using UV-vis spectrometry, crystal structure was examined using XRD, and surfaces were investigated using SEM.
3：List of Experimental Equipment and Materials:
Radio-frequency sputtering system, ZnO powder (Sigma Aldrich), ammonium hydroxide (Alfa Aesar), semiconductor parameter analyzer (HP 4145B).
4：Experimental Procedures and Operational Workflow:
For sputtering, RF power was 80 W, working pressure was 10 mTorr, Ar partial pressure was 25 sccm, and annealing was at 350 °C for 90 s. For spin-coating, ZnO solution was prepared, spin-coated, and annealed at 300 °C for 1 h.
5：Data Analysis Methods:
Photoresponsivity was calculated using the equation provided in the paper.
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